Rashba effect in strained InGaAs/InP quantum wire structures

We investigated the effect of the Rashba spin–orbit coupling in two-dimensional electron gases and quasi one-dimensional wire structures based on a strained InGaAs/InP heterostructure. For the two-dimensional electron gas structure it is demonstrated that the Rashba effect can be controlled by using a gate electrode. By a detailed discussion it is shown that our heterostructure can be employed for a spin transistor based on the Rashba effect [Appl. Phys. Lett. 56 (1990) 665]. The Rashba effect in quantum wire structures is studied by means of magnetotransport measurements. As for the two-dimensional case characteristic beating patterns were found for wire structures having a width down to 600 nm. Our results clearly show that Rashba spin–orbit coupling can directly be observed in quasi one-dimensional structures. q 2003 Elsevier Science Ltd. All rights reserved.